2SC 5200N Transistor by TOSHIBA
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The 2SC 5200N is a high-power bipolar transistor designed to manage significant electrical loads within electronic equipment. Operating with a maximum collector direct current of 15 A and a power loss capacity of 150 W, this component handles demanding thermal and electrical stresses. It features a collector-emitter voltage and collector base voltage of 230 V, alongside an emitter base voltage of 5 V. The transistor maintains a saturation voltage of 0.4 V and delivers a bandwidth gain product of 30 MHz, ensuring effective signal response and switching performance in its circuit role. Built to function reliably across harsh thermal environments, the 2SC 5200N operates within a minimum temperature of -55 C and a maximum operating temperature of +150 C.
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Where can I buy 2SC 5200N by TOSHIBA in the USA?
You can purchase 2SC 5200N by TOSHIBA from PAOParts LLC. We serve customers across the USA, offering competitive prices and reliable service.
What is the price of the 2SC 5200N?
Price and availability are quoted per request. Send the part number and the quantity you need through our quote request form and you will receive a written offer by e-mail.
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How can I access 2SC 5200N catalogs, user manuals, technical documents, and PDFs?
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Do you provide technical support for 2SC 5200N?
While we do not offer direct technical support, we can assist you in contacting the manufacturer to ensure you receive the support you need.
Characteristics
| Manufacturer | TOSHIBA |
|---|---|
| Part number | 2SC 5200N |
| Inner Code | 4003864 |
Technical specification
| Product type | High-power silicon bipolar transistor |
|---|---|
| Max Collector-Emitter Voltage VCEO | 230 V |
| Collector Base Voltage VCBO | 230 V |
| Emitter Base Voltage VEBO | 5 V |
| Saturation Voltage Collector-Emitter | 0.4 V |
| Maximum Collector Direct Current DC | 15 A |
| Power Loss Pd | 150 W |
| Bandwidth Gain Product fT | 30 MHz |
| Minimum Operating Temperature | -55 C |
| Maximum Operating Temperature | +150 C |